| 000 | 02648ctm a2200397 a 4500 | ||
|---|---|---|---|
| 001 | 00011925 | ||
| 003 | AR-BaUFI | ||
| 005 | 20240214230612.0 | ||
| 008 | 110301s2011 ag ||||| m||||||||||spa|c | ||
| 040 | _aAR-BaUFI | ||
| 084 | _aT 1828 | ||
| 100 | 1 |
_aSambuco Salomone, Lucas Ignacio _912486 |
|
| 245 | 0 | 0 | _aEstudio de inestabilidades en estructuras MOS con dieléctricos nanométricos de alto K |
| 260 | _c2011 | ||
| 300 |
_ax, 215 p. : _bgráfs., tablas ; _c30 cm |
||
| 500 | _aResumen al final de cada capítulo | ||
| 502 | _aTesis de grado -- Universidad de Buenos Aires. Facultad de Ingeniería. UBAFI, 2011 | ||
| 504 | _aBibliografía p.197-215 | ||
| 650 | 7 |
_aCARACTERIZACION _2EIT _916217 |
|
| 650 | 7 |
_aMATERIALES COMPUESTOS LAMINADOS _2EIT _919648 |
|
| 650 | 7 |
_aMATERIALES NANOESTRUCTURADOS _2EIT _919672 |
|
| 650 | 7 |
_aDIELECTRICOS _2INTI _917267 |
|
| 650 | 7 |
_aDISPOSITIVOS MOS _2EIT _917397 |
|
| 653 | 4 | _aALUMINA | |
| 653 | 4 | _aCOMPUESTOS DE HAFNIO | |
| 653 | 4 | _aINESTABILIDAD | |
| 700 | 1 |
_aLipovetzky, José _eco-dir. _98580 |
|
| 700 | 1 |
_aFaigón, Adrián Néstor _edir. _94881 |
|
| 786 | 1 | _oAIG | |
| 942 |
_fTES _n0 |
||
| 955 | _gIngeniero Electrónico | ||
| 985 |
_aC _c1 |
||
| 997 | _aTESIS | ||
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